Q15 of 47 Page 1

a. An element crystallises in bcc lattice with a cell edge of 3×10-8 cm. The density of the element is 6.89 g cm-3. Calculate the molar mass of the element. (NA = 6.022 ×× 1023 /mol)

b. What type of semiconductor is obtained when


i. Ge is doped with In?


ii. Si is doped with P?


a. Given: d= 6.89 g/cm3


a= 3×10-8cm


NA=6.022×1023 mol-1


For bcc unit cell z=2


We know that




gm/mol


So the molar mass of the element is gm/mol


b.


i. p – type semiconductor is formed when Ge is doped with In


ii. n - type semiconductor is formed when Si is doped with P


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