a. An element crystallises in bcc lattice with a cell edge of 3×10-8 cm. The density of the element is 6.89 g cm-3. Calculate the molar mass of the element. (NA = 6.022 ×× 1023 /mol)
b. What type of semiconductor is obtained when
i. Ge is doped with In?
ii. Si is doped with P?
a. Given: d= 6.89 g/cm3
a= 3×10-8cm
NA=6.022×1023 mol-1
For bcc unit cell z=2
We know that ![]()
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gm/mol
So the molar mass of the element is gm/mol
b.
i. p – type semiconductor is formed when Ge is doped with In
ii. n - type semiconductor is formed when Si is doped with P
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