The potential barrier existing across an unbiased p-n junction is 0.2 volt. What minimum kinetic energy a hole should have to diffuse from the p-side to the n-side if

(a) the junction is unbiased,

(b) the junction is forward biased at 0.1 volt and

(c) the junction is reverse biased at 0.1 volt?

A semiconducting material has a band gap of 1 eV. Acceptor impurities are doped into it which create acceptor levels 1 meV above the valence band. Assumed that the transition from one energy level to the other is almost forbidden if kT is less than 1/50 of the energy gap. Also, if kT is more than twice the gap, the upper levels have maximum population. The temperature of the semiconductor is increased from 0K. The concentration of the holes increase with temperature and after a certain temperature it becomes approximately constant. As the temperature is further increased, the hole concentration again starts increasing at a certain temperature. Find the order of the temperature range in which the hole concentration remains approximately constant.

In a p-n junction, the depletion region is 400 nm wide and an electric field of 5 × 10⁵ V m^–1 exists in it.

(a) Find the height of the potential barrier.

(b) What should be the minimum kinetic energy of a conduction electron which can diffuse from the n-side to the p-side.

In a p-n junction, a potential barrier of 250 meV exists across the junction. A hole with a kinetic energy of 300 meV approaches the junction. Find the kinetic energy of the hole when it crosses the junction if the hole approached the junction

(a) from the p-side and

(b) from the n-side

When a p-n junction is reverse biased, the current becomes almost constant at 25 μA. When it is forward biased at 200 mV, a current of 75 μA is obtained. Find the magnitude of diffusion current when the diode is

A. unbiased

B. reverse biased at 200 mV and

C. forward biased at 200 mV.