Q34 of 40 Page 93

Consider the circuit arrangement shown in Fig 14.16 (a) for studying input and output characteristics of n-p-n transistor in CE configuration.


Select the values of RB and RC for a transistor whose VBE = 0.7 V, so that the transistor is operating at point Q as shown in the characteristics shown in Fig. 14.16 (b).



Given that the input impedance of the transistor is very small and VCC = VBB = 16 V, also find the voltage gain and power gain of circuit making appropriate assumptions.


Circuit Diagram:



Using KVL at loop1,




Putting the value from the curve,




Using KVL in loop2,




Putting the values from the curve,




The voltage gain will be,




The power gain will be




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32

In the circuit shown in Fig.14.14, when the input voltage of the base resistance is 10V, Vbe is zero and Vce is also zero. Find the values of Ib, Ic and β.


 33

Draw the output signals C1 and C2 in the given combination of gates (Fig. 14.15).


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Assuming the ideal diode, draw the output waveform for the circuit given in Fig. 14.17. Explain the waveform.


 36

Suppose a ‘n’-type wafer is created by doping Si crystal having 5 × 1028 atoms/m3 with 1ppm concentration of As. On the surface 200 ppm Boron is added to create ‘P’ region in this wafer. Considering ni = 1.5 × 1016 m–3, (i) Calculate the densities of the charge carriers in the n & p regions. (ii) Comment which charge carriers would contribute largely for the reverse saturation current when diode is reverse biased.