An X-OR gate has following truth table:

It is represented by following logic relation

Build this gate using AND, OR and NOT gates.

Assuming the ideal diode, draw the output waveform for the circuit given in Fig. 14.17. Explain the waveform.

Suppose a ‘n’-type wafer is created by doping Si crystal having 5 × 10²⁸ atoms/m³ with 1ppm concentration of As. On the surface 200 ppm Boron is added to create ‘P’ region in this wafer. Considering n_i = 1.5 × 10¹⁶ m^–3, (i) Calculate the densities of the charge carriers in the n & p regions. (ii) Comment which charge carriers would contribute largely for the reverse saturation current when diode is reverse biased.

Consider a box with three terminals on top of it as shown in Fig.14.18 (a):

Three components namely, two germanium diodes and one resistor are connected across these three terminals in some arrangement.

A student performs an experiment in which any two of these three terminals are connected in the circuit shown in Fig. 14.18 (b).

The student obtains graphs of current-voltage characteristics for unknown combination of components between the two terminals connected in the circuit.

The graphs are

(i) when A is positive and B is negative

(ii) when A is negative and B is positive

(iii) When B is negative and C is positive

(iv) When B is positive and C is negative

(v) When A is positive and C is negative

(vi) When A is negative and C is positive

From these graphs of current – voltage characteristic shown in Fig. 14.18 (c) to (h), determine the arrangement of components between A, B and C.

For the transistor circuit shown in Fig.14.19, evaluate V_E, R_B, R_E given I_C = 1 mA, V_CE = 3V, V_BE = 0.5 V and V_CC = 12 V, β = 100.