Q27 of 805 Page 1

a) Draw the circuit diagram to determine the characteristics of a p- n-p transistor in common emitter configuration.

b) Explain, using I-V characteristics, how the collector current changes with the base current. How can (i) output resistance and (ii) current amplification factor be determined from the I-V characteristics?


OR


a) Why are photodiodes preferably operated under reverse bias when the current in the forward bias is known to be more than that in reverse bias?


b) The two optoelectronic devices: - Photodiode and solar cell, have the same working principle but differ in terms of their process of operation. Explain the difference between the two devices in terms of (i) biasing, (ii) junction area and (iii) I-V characteristics.

a) The circuit diagram to determine the characteristics of a p-n-p transistor is drawn below: -



b) The output I-V characteristics obtained by observing the variation of IC (collector current) as VCE is varied keeping IB (base current) constant are shown below. If VBE is raised by a small amount, the hole current from the emitter region raises. Also, the electron current from the base region raises. This leads to increase in both IB and IC proportionately.



If IB increases, IC also increases. The plot of IC versus VCE for different fixed values of IB gives one output characteristic. So, there will be different output characteristics corresponding to different values of IB as shown,



i) Determination of Output Resistance: -


Output resistance (r0) is defined as the ratio of change in


collector-emitter voltage (ΔVCE) to the change in collector current (ΔIC) at a constant base current IB. So, it can be written as,



i) Determination of Current Amplification Factor: -


Current Amplification factor (β) is defined as the ratio of the change in collector current (IC) to the change in base current (IB) at a constant collector-emitter voltage (VCE) when the transistor is in active state. So, mathematically,



βAC also known as small signal current gain and its value is found generally very large. The ratio of IC and IB gives the DC β of the transistor. Hence,



Since IC increases with IB almost linearly and IC = 0 when IB = 0, the values of both βDC and βAC are approximately equal.


OR


a) Photodiodes are preferably operated under reverse bias when the current in the forward bias is known to be more than that in reverse bias because the photodiode converts incident light to electric current efficiently in reverse bias condition than in forward bias. This is due to the expansion of the depletion region of the diode. Photons after absorption generate electron hole pairs. The pairs generated in and around the region only contribute the electric current. In the forward bias condition, there is a strong electric field there to separate the two different charge carriers, so the pairs outside the region rapidly recombine and vanish also the width of depletion region decreases as there is an increase in the applied voltage so the effective number of photons contributing to the electric current decreases. But in reversed bias condition, the width of depletion region increases as there is an increase in the applied voltage, so, a large number of incident photons get converted into electric current, consequently the efficiency increases.


b) i) On the basis of biasing


A photodiode converts incident light to electric current in reverse bias condition whereas a solar cell is basically a diode which generates emf when solar radiation falls on the p-n junction. It works on the same principle (photovoltaic effect) as the photodiode, except that no external bias is applied.


ii) On the basis of junction area


photodiode is a simple p-n junction diode which is operated in reversed bias condition whereas a solar cell is a p-n junction diode in which the junction area is kept much larger for solar radiation to be incident and is not biased.


iii) On the basis of I-V characteristics


The I – V characteristics of a photodiode is drawn same as of a p-n junction diode in reverse bias condition as shown below




The I – V characteristics of solar cell is drawn in the fourth quadrant of the coordinate axes as shown in the diagram.


This is because a solar cell does not draw current but supplies the same to the load.


More from this chapter

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25

(a)Write the expression for the equivalent magnetic moment of a planer current loop of area A, having N turns and carrying a current i. Use the expression to find the magnetic dipole moment of a revolving electron.

(b)A circular loop of radius r, having N turns and carrying current I, is kept in the XY plane. It is then subjected to a uniform magnetic field . Obtain expression for the magnetic potential energy of the coil-magnetic field system.


OR


(a) A long solenoid with air core has n turns per unit length and carries a current I. Using Ampere’s circuital law, derive an expression for the magnetic field B at an interior point on its axis. Write an expression for magnetic intensity H in the interior of the solenoid.


(b) A (small) bar of material, having magnetic susceptibility χ, is now put along the axis and near the centre, of the solenoid which is carrying a d.c. current through its coils. After some time, the bar is taken out and suspended freely with an unspun thread. Will the bar orient itself in magnetic meridian if (i) χ < 0 (ii) χ ˃ 1000?


Justify your answer in each case.

26

(a) There are two sets of apparatus of Young’s double slit experiment. In set A, the phase difference between the two waves emanating from the slits does not change with time, whereas in set B, the phase difference between the two waves from the slits changes rapidly with time. What difference will be observed in the pattern obtained on the screen in the two set ups?

(b) Deduce the expression for the resultant intensity in both the above-mentioned set ups (A and B), assuming that the waves emanating from the two slits have the same amplitude A and same wavelength λ.


OR


(a)The two polaroids, in a given set up, are kept ‘crossed’ with respect to each other. A third polaroid, now put in between these two polaroids, can be rotated. Find an expression for the dependence of the intensity of light I, transmitted by the system, on the angle between the pass axis of first and the third polaroid. Draw a graph showing the dependence of I on ϴ.


(b)When an unpolarized light is incident on a plane glass surface, find the expression for the angle of incidence so that the reflected and refracted light rays are perpendicular to each other. What is the state of polarization, of reflected and refracted light, under this condition?

1

In the given figure, charge + Q is placed at the centre of a dotted circle. Work done in taking another charge + q from A to B is W1 and from B to C is W2. Which one of the following is correct: W1 > W2, W1 = W2 and W1 < W2?

2

Plot a graph showing the variation of current ‘I’ versus resistance ‘R’, connected to a cell of emf E and internal resistance ‘r’.